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- Self-Assembled Monolayers in Area-Selective Atomic Layer Deposition and Their Challenges
- Si Eun Jung, Ji Woong Shin, Ye Jin Han, Byung Joon Choi
- J Powder Mater. 2025;32(3):179-190. Published online June 30, 2025
- DOI: https://doi.org/10.4150/jpm.2025.00094
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Abstract
PDF - Area-selective atomic layer deposition (AS-ALD) is a bottom-up process that selectively deposits thin films onto specific areas of a wafer surface. The surface reactions of AS-ALD are controlled by blocking the adsorption of precursors using inhibitors such as self-assembled monolayers (SAMs) or small molecule inhibitors. To increase selectivity during the AS-ALD process, the design of both the inhibitor and the precursor is crucial. Both inhibitors and precursors vary in reactivity and size, and surface reactions are blocked through interactions between precursor molecules and surface functional groups. However, challenges in the conventional SAM-based AS-ALD method include thermal instability and potential damage to substrates during the removal of residual SAMs after the process. To address these issues, recent studies have proposed alternative inhibitors and process design strategies.
- [Korean]
- Recent Studies on Area Selective Atomic Layer Deposition of Elemental Metals
- Min Gyoo Cho, Jae Hee Go, Byung Joon Choi
- J Powder Mater. 2023;30(2):156-168. Published online April 1, 2023
- DOI: https://doi.org/10.4150/KPMI.2023.30.2.156
- 766 View
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- 1 Citations
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Abstract
PDF
The semiconductor industry faces physical limitations due to its top-down manufacturing processes. High cost of EUV equipment, time loss during tens or hundreds of photolithography steps, overlay, etch process errors, and contamination issues owing to photolithography still exist and may become more serious with the miniaturization of semiconductor devices. Therefore, a bottom-up approach is required to overcome these issues. The key technology that enables bottom-up semiconductor manufacturing is area-selective atomic layer deposition (ASALD). Here, various ASALD processes for elemental metals, such as Co, Cu, Ir, Ni, Pt, and Ru, are reviewed. Surface treatments using chemical species, such as self-assembled monolayers and small-molecule inhibitors, to control the hydrophilicity of the surface have been introduced. Finally, we discuss the future applications of metal ASALD processes.
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Citations
Citations to this article as recorded by
- Selective Atomic Layer Deposition of Co Thin Films Using Co(EtCp)2 Precursor
Sujeong Kim, Yong Tae Kim, Jaeyeong Heo
Korean Journal of Materials Research.2024; 34(3): 163. CrossRef
- Selective Atomic Layer Deposition of Co Thin Films Using Co(EtCp)2 Precursor
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